to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors BC350 transistor (pnp) features z general purpose switch ing and amplification. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -45 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.1 a collector cut-off current i ceo v ce =-35v,i b =0 -0.1 a emitter cut-off current i ebo v eb =-3v,i c =0 -0.1 a dc current gain h fe v ce =-5v, i c =-2ma 40 450 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.3 v base-emitter saturation voltage v be(sat) i c =-10ma,i b =-1ma -1 v transition frequency f t v ce =-5v,i c =-10ma,f=30mhz 125 mhz symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -45 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.1 a p c collector power dissipation 0.3 w r ja thermal resistance from junction to ambient 416 /w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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